Category Status Polarity Package(D×W×H) [mm] Marking Application Complementary product Discrete Devices > Transistors > Small-Signal Transistors > High-Gain High-VEBO Transistors present PNP NP (19.0×5.0×4.0) - High-gain, low-frequency general-purpose amplifier 2SC3069
2SA1436 |
RFQ for 2SA1436 |
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| Product | Manufacturers | Pack | D/C | |||||||
| 2SA1436 | - | TO-92 | 05+/06+ |
Typical Application |
Features |
| · AF amplifier, various drivers, muting circuit | · Adoption of MBIT process.· High DC current gain (hFE=500 to 1200).· Large current capacity.· Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max).· High VEBO (VEBO³15V). |
| Parameter |
Symbol |
Conditions |
Ratings |
Unit |
| Collector-base voltage |
VCBO |
-60 |
V | |
| Collector-emitter voltage |
VCEO |
-50 |
V | |
| Emitter-base voltage |
VEBO |
-15 |
V | |
| Collector current |
Ic |
-200 |
mA | |
| Collector Current (Pulse) |
ICP |
-300 |
mA | |
| Collector Dissipation |
PC |
600 |
mW | |
| Junction temperature |
Tj |
150 |
°C | |
| Storage temperature |
Tstg |
-55 to +150 |
°C |